ZTX652 데이터 시트보기 (PDF) - Zetex => Diodes

부품명

상세내역

제조사

ZTX652

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

Zetex => Diodes 

ZTX652

ZTX653

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX652

ZTX653

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Transition

Frequency

fT

140 175

140 175

MHz IC=100mA, VCE=5V

f=100MHz

Switching Times ton

80

80

ns

toff

1200

1200

ns

Output Capacitance Cobo

30

30 pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

IC=500mA, VCC=10V

IB1=IB2=50mA

VCB=10V f=1MHz

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

Thermal Resistance: Junction to Ambient1

Junction to Ambient2

Junction to Case

Rth(j-amb)1

Rth(j-amb)2†

Rth(j-case)

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

MAX.

175

116

70

UNIT

°C/W

°C/W

°C/W

2.5

2.0

1.5

1.0

0.5

AmbieCnat steemtemppeerraattuurree

0

-40 -20 0 20 40 60 80 100 120 140 160 180 200

T -Temperature (°C)

Derating curve

200

D=1 (D.C.)

t1 D=t1/tP

100

tP

D=0.5

D=0.2

D=0.1

Single Pulse

0

0.0001 0.001 0.01 0.1

1

10

100

Pulse Width (seconds)

Maximum transient thermal impedance

3-223

Share Link: