BFR505 데이터 시트보기 (PDF) - Philips Electronics

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BFR505

NPN 9 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 9 GHz wideband transistor

Product specification

BFR505

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

PINNING

PIN

DESCRIPTION

Code: N30

1 base

2 emitter

3 collector

DESCRIPTION

The BFR505 is an npn silicon planar

epitaxial transistor, intended for

applications in the RF frontend in

wideband applications in the GHz

range, such as analog and digital

cellular telephones, cordless

telephones (CT1, CT2, DECT, etc.),

radar detectors, pagers and satellite

TV tuners (SATV).

The transistor is encapsulated in a

plastic SOT23 envelope.

fpage

3

1

Top view

2

MSB003

Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCES

IC

Ptot

hFE

Cre

fT

GUM

collector-base voltage

collector-emitter voltage

DC collector current

total power dissipation

DC current gain

feedback capacitance

transition frequency

maximum unilateral

power gain

S212

F

insertion power gain

noise figure

open emitter

RBE = 0

up to Ts = 135 °C; note 1

IC = 5 mA; VCE = 6 V

IC = ic = 0; VCB = 6 V; f = 1 MHz

IC = 5 mA; VCE = 6 V; f = 1 GHz

IC = 5 mA; VCE = 6 V;

Tamb = 25 °C; f = 900 MHz

IC = 5 mA; VCE = 6 V;

Tamb = 25 °C; f = 2 GHz

IC = 5 mA; VCE = 6 V;

Tamb = 25 °C; f = 900 MHz

Γs = Γopt; IC = 1.25 mA; VCE = 6 V;

Tamb = 25 °C; f = 900 MHz

Γs = Γopt; IC = 5 mA; VCE = 6 V;

Tamb = 25 °C; f = 900 MHz

Γs = Γopt; IC = 1.25 mA; VCE = 6 V;

Tamb = 25 °C; f = 2 GHz

Note

1. Ts is the temperature at the soldering point of the collector tab.

September 1995

2

MIN. TYP. MAX. UNIT

−

−

20 V

−

−

15 V

−

−

18 mA

−

−

150 mW

60 120 250

−

0.3 −

pF

−

9

−

GHz

−

17 −

dB

−

10 −

dB

13 14 −

dB

−

1.2 1.7 dB

−

1.6 2.1 dB

−

1.9 −

dB

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