BYC10B-600 데이터 시트보기 (PDF) - NXP Semiconductors.
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BYC10B-600 Datasheet PDF : 9 Pages
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1;3 Semiconductors
Rectifier diode
ultrafast, low switching loss
Product specification
BYC10B-600
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
trr
Reverse recovery time
trr
Reverse recovery time
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
CONDITIONS
IF = 10 A; Tj = 150˚C
IF = 20 A; Tj = 150˚C
IF = 10 A;
VR = 600 V
VR = 500 V; Tj = 100 ˚C
IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs
IF = 10 A; VR = 400 V;
dIF/dt = 500 A/μs
IF = 10 A; VR = 400 V;
dIF/dt = 500 A/μs; Tj = 100˚C
IF = 10 A; VR = 400 V;
dIF/dt = 100 A/μs; Tj = 125˚C
IF = 10 A; VR = 400 V;
dIF/dt = 500 A/μs; Tj = 125˚C
IF = 10 A; dIF/dt = 100 A/μs
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
1.4
1.7
2.0
9
1.1
35
19
32
3
9.5
8
MAX.
1.8
2.3
2.9
200
3.0
55
-
UNIT
V
V
V
μA
mA
ns
ns
40 ns
7.5 A
12
A
11
V
IL
Vin
150 uH
typ
ID
Vo = 400 V d.c.
OUTPUT DIODE
500 V MOSFET
Vin Vin = 400 V d.c.
IR IF
inductive load
IL
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction, mode where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
March 2001
2
Rev 1.400
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