VS-30EPH03-N3 데이터 시트보기 (PDF) - Vishay Semiconductors
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VS-30EPH03-N3 Datasheet PDF : 7 Pages
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180
170
DC
160
150 Square wave (D = 0.50)
Rated VR applied
140
130
See note (1)
120
0 5 10 15 20 25 30 35 40 45
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
50
40
RMS limit
30
20
10
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
10
20
30
40
50
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
VS-30EPH03PbF, VS-30EPH03-N3
Vishay Semiconductors
100
IF = 30 A, TJ = 25 °C
IF = 30 A, TJ = 125 °C
10
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
1000
IF = 30 A, TJ = 125 °C
100
IF = 30 A, TJ = 25 °C
10
100
1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 09-Jul-15
4
Document Number: 94017
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