BFR93P 데이터 시트보기 (PDF) - Siemens AG

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BFR93P

NPN Silicon RF Transistor

Siemens AG 

BFR 93P

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

VCB = 20 V, IE = 0

Emitter-base cutoff current

VEB = 2.5 V, IC = 0

DC current gain

IC = 25 mA, VCE = 5 V

Collector-emitter saturation voltage

IC = 50 mA, IB = 5 mA

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 15

ICB0

–

–

IEB0

–

hFE

30

VCEsat

–

–

–

V

µA

–

0.05

–

10

–

100

100 –

–

0.2 0.5 V

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