BFR91 데이터 시트보기 (PDF) - Advanced Power Technology

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BFR91

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

BFR91

BFR91G

* G Denotes RoHS Compliant, Pb Free Terminal Finish

Features

• High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA

• Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz

• High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz

Macro T

(STYLE #2)

DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in

applications requiring fast switching times.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

P

D

Tstg

Total Device Dissipation @ TA = 60ºC

Derate above 60ºC

Storage Temperature

RθJA

Total Device Dissipation @ TA = 60ºC

Derate above 60ºC

Value

12

15

3.0

35

180

2.0

-65 to +150

500

Unit

Vdc

Vdc

Vdc

mA

mWatts

mW/ ºC

ºC

ºC/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

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