2SJ609 데이터 시트보기 (PDF) - SANYO -> Panasonic
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2SJ609 Datasheet PDF : 4 Pages
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Ordering number : ENN6671
2SJ609
P-Channel Silicon MOSFET
2SJ609
DC / DC Converter Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2190
8.0
4.0
1.0 1.0
[2SJ609]
3.3
3.0
1.6
0.8
0.8
0.75
0.7
123
Specifications
Absolute Maximum Ratings at Ta=25°C
2.4
4.8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Conditions
PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
Tc=25°C
Tch
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
1 : Source
2 : Drain
3 : Gate
SANYO : TO-126ML
Ratings
Unit
--60
V
±20
V
--5
A
--20
A
1
W
10
W
150
°C
--55 to +150
°C
min
--60
Ratings
Unit
typ
max
V
--10
µA
±10
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90100 TS IM TA-2920 No.6671-1/4
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