FDMA430NZ 데이터 시트보기 (PDF) - ON Semiconductor
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FDMA430NZ Datasheet PDF : 7 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
VGS = 0V , ID = 250PA
ID = 250PA,
Referenced to 25°C
VDS = 24V, VGS = 0V,
VGS = r12V, VDS = 0V
30
V
25.2
mV/°C
1
PA
r10
PA
On Characteristics (Note 2)
VGS(th)
'VGS(th)
'TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250PA
ID = 250PA,
Referenced to 25°C
VGS = 4.5V, ID = 5.0A
VGS = 4.0V, ID = 5.0A
VGS = 3.1V, ID =4.5A
VGS = 2.5V, ID =4.5A
VGS = 4.5V, ID =5.0A,
TJ =150°C
VDS = 5V, ID =5.0A
0.6 0.81 1.5
V
-3.2
mV/°C
23.6 40
23.9 41
25.4 43
m:
27.6 50
37.0 61
25.6
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10V, VGS =0V,
f = 1.0MHz
f = 1.0MHz
600 800 pF
110 150 pF
75
115
pF
3.5
:
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10V, ID = 1A
VGS = 4.5V, RGEN = 6:
VDS = 10V, ID = 5.0A,
VGS = 4.5V
8.3
17
ns
7.1
15
ns
18.1 37
ns
6.0
12
ns
7.3
11
nC
0.8
2
nC
1.9
3
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.0
A
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A
0.69 1.2
V
trr
Diode Reverse Recovery Time
IF = 5.0A,
Qrr
Diode Reverse Recovery Charge
di/dt = 100A/Ps
17
ns
5
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%
3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
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