2SC5050 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC5050

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC5050

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

S21 Parameter

Symbol Min

V(BR)CBO

15

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

fT

8.0

|S21| —

Power gain

PG

11.0

Noise figure

NF

—

Note: Marking is “YZ–”.

Typ

—

—

—

—

120

0.6

11.0

13.5

14.0

1.1

Max

—

10

1

10

250

1.1

—

—

—

2.0

Unit

V

µA

mA

µA

pF

GHz

dB

dB

dB

Test conditions

IC = 10 µA, IE = 0

VCB = 12 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 20 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 20 mA

VCE = 5 V, IC = 20 mA,

f = 1000 MHz

VCE = 5 V, IC = 20 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

See characteristic curves of 2SC4926.

2

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