2SC4982 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SC4982

Silicon NPN Power Transistors

New Jersey Semiconductor 

, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Power Transistors

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC4982

DESCRIPTION

• Collector-Emitter Sustaining Voltage-

: VCEo(sus)= SOV(Min)

• Collector Current-lc= 10A(Max.)

• Low Collector Saturation Voltage

) = 0.3V(Max.)@ |c= 5A

APPLICATIONS

• Designed for use in drivers such as DC/DC converters

and actuators.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

j

123

PIN 1.BASE

2. COLLECTOR

3. EMITTER

FTO-220 package

VCBO

VCEO

Collector-Base Voltage

Collector-Emitter Voltage

100

V

80

V

»c»

-• B *•

VEBO

Emitter-Base Voltage

7

V

Ic

Collector Current-Continuous

10

A

IGM

Collector Current-Peak

IB

Base Current-Continuous

20

A

1.5

A

•- — D

IBM

Base Current-Peak

Total Power Dissipation

PT

@ TC=25°C

Tj

Junction Temperature

Tstg

Storage Temperature Range

2

A

25

W

150

•c

-55-150

•c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance, Junction to Case

5

•CM/

mm

DIM MIN MAX

A 16.70 17.00

B 9.80 10.20

C 4.40 4.80

D 0.70 0.90

F 3.20 3.40

H 2.SO 2.70

J 0.50 0.70

K 13.80 14.20

L 1.10 1.30

H 4.98 5.18

Q 4.00 4.40

R 2.60 2.80

N.I Senii-Conductors reserves the right to change tost conditions, parameter limits and package dimensions \\ithout

notice. Information furnished by N.I Semi-O.'onductors is believed to be both accurate and reliable at the time of going

to press. I louever. N.I Semi-Condnetors assumes no responsihilit) for any errors or omissions discovered in its use.

N.I Semi-C'onduetors enconraijes customers to verily that datasheets are current before placing onler.s.

Quality 5emi-Con<Juctors

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