TIP31F 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
제조사
TIP31F Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP31F
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= 1A
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 160V(Min)
·Complement to Type TIP32F
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
160
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
5
A
IBB
Base Current
PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
1
A
40
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.125 ℃/W
isc Website：www.iscsemi.cn
Share Link: 