RMBA09501-58(2001) 데이터 시트보기 (PDF) - Raytheon Company
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RMBA09501-58 Datasheet PDF : 6 Pages
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Description
Features
RMBA09501-58
Cellular 2 Watt Linear GaAs MMIC Power
Amplifier
ADVANCED INFORMATION
The RMBA09501 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT
process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and
Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. The
device is matched for 50 ohms input impedance.
2 Watt Linear output power at 37 dBc ACPR1 for CDMA operation
Small Signal Gain of > 30 dB
Small outline SMD package
Absolute
Maximum
Ratings1
Parameter
Drain Supply Voltage
Gate Supply Voltage
RF Input Power (50 ohm Source)
Case Operating Temperature
Storage Temperature
Symbol Min
VDD
VGS
PRF
TC
-30
TS
-40
Typical
Max
+10
-5
+5
+85
+100
Units
V
V
dBm
°C
°C
Electrical
Characteristics2
Parameter
Min
Frequency Range
869
Gain (small signal)
Gain variation:
Over frequency range
Over temperature range
Noise Figure
Linear output power:
for CDMA 3
33
Saturated output power
Typ
32
+/-1.5
+/-2.5
6
38
Max Unit
894 MHz
dB
dB
dB
dB
dBm
dBm
Parameter
PAE
Input VSWR (50Ω)
RF Input Power
Drain Voltage (VDD)
Gate Voltage (VGS) 4
Quiescent current
(IDQ1, IDQ2)
Thermal Resistance
(Channel to Case) Rjc
Min Typ Max Unit
20
%
2:1
+1
dBm
7.0
Volts
-3
Volts
150, 400
mA
11
°C/W
www.raytheonrf.com
Notes:
1. Not with RF power simultaneously applied.
2. 50 ohm system, VDD = 7.0V, T = 25°C
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. ACPR1 measured at 885 KHz offset at a value ≥ 37 dBc. CDMA
Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30 kHz bandwidth at an 885 MHz offset.
4. Gate Voltage can be adjusted to optimize the linearity of the amplifier for differing modulation systems. Default biasing is optimized for
CDMA (Ref. Note 2).
Characteristic performance data and specifications are subject to change without notice.
Revised November 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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