MMBT2222 데이터 시트보기 (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

부품명

상세내역

제조사

MMBT2222

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

Epitaxial planar die construction.

Ultra-small surface mount package.

MMBT2222 (NPN)

MARKING: MB1

MAXIMUM RATINGS (TA=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

60

VCEO

30

VEBO

5

IC

0.6

PC

0.3

TJ

150

Tstg

-55 to +150

Unit

V

V

V

A

W

1. BASE

2. EMITTER

3. COLLECTO

SOT-23

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ

Collector-base breakdown voltage

VCBO

IC=10μA IE=0

60

Collector-emitter breakdown voltage

VCEO

IC=10mA IB=0

30

Emitter-base breakdown voltage

VEBO

IE=10μA IC=0

5

Collector cut-off current

ICBO

VCB=50V IE=0

Emitter cut-off current

IEBO

VEB=3V IC=0

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Output capacitance

VCE=10V IC=150mA

100

VCE=10V IC=0.1mA

35

VCE=10V IC=1.0mA

50

hFE

VCE=10V IC=10mA

75

VCE=10V IC=500mA

30

VCE=1V IC=150mA

50

VCE(sat)

VBE(sat)

IC=500mA IB=50mA

IC=150mA IB=15mA

IC=500mA IB=50mA

IC=150mA IB=15mA

VCE=20V IC=20mA

fT

250

f=100MHz

Cobo

VCB=10V,IE=0,f=1MHz

Input capacitance

Cibo

VEB=0.5V,IC=0, f=1MHz

Delay time

td

Vcc=30V, VBE(off)=0.5V

IC=150mA , IB1= 15mA

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

Max Unit

V

V

V

0.01 μA

0.01 μA

300

1.6

0.4

V

2.6

1.3

V

MHz

8.0

pF

30

pF

10

ns

Page:P2-P1

Share Link: