BFR194 데이터 시트보기 (PDF) - Infineon Technologies

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BFR194

PNP Silicon RF Transistor

Infineon Technologies 

BFR 194

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

min.

typ.

max.

AC Characteristics

Transition frequency

IC = 70 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 20 mA, VCE = 8 V, ZS = ZSopt

f = 900 MHz

f = 1.8 GHz

Power gain 2)

IC = 70 mA, VCE = 8 V, ZS = ZSopt

ZL = ZLopt

f = 900 MHz

f = 1.8 GHz

Transducer gain

IC = 70 mA, VCE = 8 V, ZS =ZL= 50 Ω

f = 900 MHz

f = 1.8 MHz

fT

3.5

Ccb

-

Cce

-

Ceb

-

F

-

-

Gma

-

-

|S21e|2

-

-

5

-

1.47

2

0.28 -

4.4

-

2.8

-

4.7

-

10

-

5.5

-

8

-

3

-

2) Gma = |S21/S12| (k-(k2-1)1/2)

Unit

GHz

pF

dB

Semiconductor Group

3

Dec-13-1996

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