BFQ75 데이터 시트보기 (PDF) - Infineon Technologies

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BFQ75

PNP Silicon RF Transistor

Infineon Technologies 

PNP Silicon RF Transistor

q For broadband amplifiers up to 2 GHz

at collector currents from 5 mA to 30 mA.

q Complementary type: BFQ 72 (NPN).

BFQ 75

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type

BFQ 75

Marking

75

Ordering Code

(tape and reel)

Q62702-F803

Pin Configuration

1 2 34

B ECE

Package1)

Cerec-X

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage, VBE = 0

Collector-base voltage

Emitter-base voltage

Collector current

Total power dissipation, TS ≤ 112 ˚C3)

Junction temperature

Ambient temperature range

Storage temperature range

Thermal Resistance

Junction - ambient2)

Junction - soldering point3)

Symbol

VCE0

VCES

VCB0

VEB0

IC

Ptot

Tj

TA

Tstg

Values

Unit

12

V

1

15

2

50

mA

350

mW

175

˚C

– 65 … + 175

– 65 … + 175

Rth JA

Rth JS

≤ 260

K/W

≤ 180

1) For detailed dimensions see chapter Package Outlines.

2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

3) TS is measured on the collector lead at the soldering point to the pcb.

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