BFQ75 데이터 시트보기 (PDF) - Infineon Technologies

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BFQ75

PNP Silicon RF Transistor

Infineon Technologies 

BFQ 75

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base cutoff current

VCB = 5 V, IE = 0

Emitter-base cutoff current

VEB = 2 V, IC = 0

DC current gain

IC = 30 mA, VCE = 5 V

V(BR)CE0 12

–

–

V

ICB0

–

–

50 nA

IEB0

–

–

10

µA

hFE

20

50

–

–

AC Characteristics

Transition frequency

IC = 30 mA, VCE = 5 V, f = 500 MHz

fT

–

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Ccb

–

Input capacitance

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Cibo

–

Output capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Cobs

–

Noise figure

F

IC = 10 mA, VCE = 8 V, f = 10 MHz, ZS = 50 Ω

–

IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω

–

Power gain

IC = 30 mA, VCE = 8 V, f = 800 MHz,

ZS = ZSopt, ZL = ZLopt

Gpe

–

5

–

0.75 –

1.6 –

1.1 –

2.2 –

3

–

14 –

GHz

pF

dB

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