BFP194 데이터 시트보기 (PDF) - Infineon Technologies

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BFP194

PNP Silicon RF Transistor

Infineon Technologies 

PNP Silicon RF Transistor

For low distortion broadband amplifier in

antenna and telecommunications systems up

to 1.5 GHz at collector currents from 20 mA

to 80 mA

BFP 194

3

4

2

1 VPS05178

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP 194

RKs

1 = C 2 = E 3 = B 4 = E SOT-143

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation, TS
77 °C 1)

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

Value

Unit

15

V

20

20

3

100

mA

10

700

mW

150

°C

-65 ... 150

-65 ... 150

105

K/W

1) TS is measured on the collector lead at the soldering point to the pcb

1

Oct-12-1999

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