BFP194 데이터 시트보기 (PDF) - Infineon Technologies

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BFP194

PNP Silicon RF Transistor

Infineon Technologies 

BFP 194

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2 V, IC = 0

DC current gain

IC = 70 mA, VCE = 8 V

V(BR)CEO 15

-

-V

ICBO

-

-

100 nA

IEBO

-

-

1 µA

hFE

15 50

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2

Oct-12-1999

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