BF660W 데이터 시트보기 (PDF) - Siemens AG
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BF660W Datasheet PDF : 4 Pages
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BF 660W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 20 , IE = 0
DC current gain
IC = 3 mA, VCE = 10 V
AC Characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0 , f = 1 MHz
V(BR)CEO
30
V(BR)CBO
40
V(BR)EBO
4
ICBO
-
hFE
30
fT
-
Ccb
-
Cce
-
-
-
-
-
-
700
0.4
0.15
max.
-
-
-
50
-
-
-
-
Unit
V
nA
-
MHz
pF
Semiconductor Group
2
Aug-14-1996
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