BF506 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

제조사

BF506

PNP Silicon RF Transistor

Infineon Technologies 

BF 506

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 2 mA

Collector-base breakdown voltage

IC = 10 µA

Emitter-base breakdown voltage

IE = 10 µA

Collector cutoff current

VCB = 20 V

DC current gain

IC = 3 mA, VCE = 10 V

AC Characteristics

Transition frequency

IC = 2 mA, VCE = 10 V, f = 100 MHz

Collector-emitter capacitance

VCB = 10 V, VBE = 0 V, f = 1 MHz

Noise figure

IC = 2 mA, VCB = 10 V, f = 200 MHz

RS = 60 Ω

Symbol

Values

Unit

min. typ. max.

V(BR) CE0 35

–

V(BR) CB0 40

–

V(BR) EB0 4

–

ICB0

–

–

hFE

25

–

–

V

–

–

100 nA

–

–

fT

–

550 –

MHz

Cce

–

0.12 –

V

F

–

3

–

dB

Semiconductor Group

2

Share Link: