BF1105R 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1105R Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
handbook, full pagewidth
VAGC
VDS
1 nF
input
50 Ω
5.5 pF
C1
L1
1 nF
1 nF
15
pF
1 nF
47 kΩ
L2
G2
D
BF1105
G1
BF1105R
BF1105WR
S
2 μH
1 nF
10 pF
BB405
1 nF
BB405
330 kΩ
1 nF
output
50 Ω
330 kΩ
1 nF
Vtun input
Vtun output MGM255
VDS = 5 V, GS= 2 mS, GL = 0.5 mS, f = 200 MHz.
L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire.
L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set GL = 0.5 mS.
C1 adjusted for GS = 2 mS.
Fig.16 Gain test circuit.
handbook, full pagewidth
VAGC
1 nF
VDS
1 nF
input
;;; ;;;;;;;; 1nF
47 kΩ
1 nF
L1
G2
D
BF1105
G1
BF1105R
BF1105WR
S
L3
L2
0.5 to 3.5 pF
1 nF
output
50 Ω
4 to 40 pF
50 Ω
2 to 18 pF
0.5 to 3.5 pF
MGM256
VDS = 5 V, GS= 3.3 mS, GL = 1 mS, f = 800 MHz.
L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH.
Fig.17 Gain test circuit.
1997 Dec 02
8
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