DGSK20-025AS 데이터 시트보기 (PDF) - IXYS CORPORATION
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DGSK20-025AS Datasheet PDF : 2 Pages
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20
10
A
IF
1
200
pF
100
CJ
DGSK 20-022AS
DGSK 20-025AS
0.1
TVJ =
125°C
25°C
0.01
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 typ. forward characteristics
10
0.1
TVJ = 125°C
1
10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
ZthJC
0.1
Single Pulse
Outline TO-263 AB
0.01
0.00001
0.0001
0.001
0.01
0.1
Fig. 3 typ. thermal impedance junction to case
DGS10-015/018BS
1 s 10
t
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
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