ZTX656 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZTX656

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS

Diodes Incorporated. 

NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTORS

ISSUE 2 – JULY 94

FEATURES

* 300 Volt VCEO

* 0.5 Amp continuous current

* Ptot=1 Watt

ZTX656

ZTX657

ABSOLUTE MAXIMUM RATINGS.

C

B

E

E-Line

TO92 Compatible

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at Tamb=25°C

Operating and Storage Temperature

Range

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

Ptot

Tj:Tstg

ZTX656 ZTX657

200

300

200

300

5

1

0.5

1

-55 to +200

UNIT

V

V

V

A

A

W

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

ZTX656

ZTX657

SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.

Collector-Base

V(BR)CBO 200

300

V

IC=100µA, IE=0

Breakdown Voltage

Collector-Emitter

V(BR)CEO 200

300

V

IC=10mA, IB=0*

Breakdown Voltage

Emitter-Base

V(BR)EBO 5

5

V

IE=100µA, IC=0

Breakdown Voltage

Collector Cut-Off

ICBO

Current

Emitter Cut-Off

IEBO

Current

100

nA VCB=160V, IE=0

100 nA VCB=200V, IE=0

100

100 nA VEB=3V, IC=0

Collector-Emitter

VCE(sat)

0.5

0.5 V

IC=100mA, IB=10mA*

Saturation Voltage

Base-Emitter

VBE(sat)

1

Saturation Voltage

1

V

IC=100mA, IB=10mA*

Base-Emitter

VBE(on)

1

Turn-On Voltage

1

V

IC=100mA, VCE=5V*

Static Forward

hFE

50

50

Current Transfer

40

40

Ratio

IC=100mA, VCE=5V

IC=10mA, VCE=5V

Transition

fT

30

30

MHz IC=10mA, VCE=20V

Frequency

f=20MHz

3-227

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