FDB5690 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB5690 Datasheet PDF : 16 Pages
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Typical Characteristics (continued)
10
ID = 16A
8
6
4
2
0
0
5
VDS = 10V
20V
30V
10
15
20
25
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
1
SINGLE PULSE
RθJC = 2.3oC/W
TC = 25oC
0.1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1600
1200
800
CISS
f = 1MHz
VGS = 0 V
400
0
0
COSS
CRSS
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
2500
2000
1500
SINGLE PULSE
RθJC = 2.6oC/W
TA = 25oC
1000
500
0
0.01
0.1
1
10
100
SINGLE PULSE TIME (ms)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.05 0.02
0.03 0.01
0.02
Single Pulse
0.01
0.01
0.1
1
10
t1 ,TIME (ms)
R θJC (t) = r(t) * RθJC
RθJC = 2.6 °C/W
P(pk)
t1
t2
TJ - TC = P * RθJC (t)
Duty Cycle, D = t1 /t2
100
1000
Figure 11. Transient Thermal Response Curve.
FDP5690/FDB5690 Rev. C
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