FMMT494 데이터 시트보기 (PDF) - Diodes Incorporated.

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FMMT494

120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

Diodes Incorporated. 

A Product Line of

Diodes Incorporated

FMMT494

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 9)

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector Emitter Cutoff Current

Static Forward Current Transfer Ratio (Note 9)

Collector-Emitter Saturation Voltage (Note 9)

Base-Emitter Turn-On Voltage(Note 9)

Base-Emitter Saturation Voltage(Note 9)

Output Capacitance

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

ICES

hFE

VCE(sat)

VBE(on)

VBE(sat)

Cobo

Min

Typ

140

—

120

—

7

—

—

—

—

—

—

—

100

—

100

—

60

—

20

—

—

—

—

—

—

—

—

—

—

—

Transition Frequency

fT

100

—

Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Max

—

—

—

100

100

100

—

300

—

—

200

300

1.0

1.1

10

—

Unit

V

V

V

nA

nA

nA

—

mV

V

V

pF

MHz

Test Condition

IC = 100µA

IC = 1mA

IE = 100µA

VCB = 120V

VEB = 5V

VCE = 120V

IC = 1mA, VCE = 10V

IC = 250mA, VCE = 10V

IC = 500mA, VCE = 10V

IC = 1A, VCE = 10V

IC = 250mA, IB = 25mA

IC = 500mA, IB = 50mA

IC = 500mA, VCE = 10V

IC = 500mA, IB = 50mA

VCB = 10V, f = 1MHz

VCE = 50V, IC = 10mA,

f = 100MHz

FMMT494

Document number: DS33095 Rev. 4 - 2

4 of 7

www.diodes.com

October 2012

© Diodes Incorporated

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