2SD1255 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1255

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD1255

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 130V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 0.5V(Max.)@ IC= 3.0A

·Fast Switching Speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·Power amplifier applications

·Switching regulators

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

130

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

8

A

35

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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