2SD1255 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1255 Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1255
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.0A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 150V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 2V
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC=0.5A ; VCE= 10V
MIN TYP. MAX UNIT
130
V
0.5
V
1.5
V
50 μA
50 μA
45
90
260
30
MHz
hFE-2Classifications
Q
P
90-180
130-260
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