2SA747 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SA747 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA747
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)ceo Collector-Emitter Breakdown Voltage lc=-50mA;lB= 0
-120
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB=-120V; IE=0
-2.0
V
-1.0 mA
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
-1.0 mA
hFE
DC Current Gain
lc= -3A; VCE= -4V
30
fr
Current-Gain—Bandwidth Product
IE=0.5A;VCE=-12V
15
MHz
Switching times
tr
Rise Time
*stg
Storage Time
tf
Fall Time
lc=-3A,RL=4n,Vcc- -12V
lsi= -0.2A; IB2= 50mA
1.2
Vs
3.3
us
0.8
us
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