2SA738 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SA738 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)C6O Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -500mA; IB= -50mA
VBE(OH) Base-Emitter On Voltage
lc= -500mA; VCE= -2V
ICBO
Collector Cutoff Current
VGB= -25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hFE
DC Current Gain
lc= -500mA; VCE= -2V
ft
Current-Gain—Bandwidth Product
lc= -50mA; VCE= -5V
2SA738
MIN TYP. MAX UNIT
-25
V
-0.5
V
-1.0
V
-1.0 V A
-1.0 u A
60
320
160
MHz
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