A754 데이터 시트보기 (PDF) - New Jersey Semiconductor

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A754

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA754

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -50V(Min)

• Low Collector Saturation Voltage-

: VcEfsatr -1.3V(Max.) @ lc= -1.5A

• Good Linearity of hFE

APPLICATIONS

• Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-50

V

VCEO Collector-Emitter Voltage

-50

V

VEBO Emitter-Base Voltage

-4

V

Ic

Collector Current-Continuous

-2

A

PC

Total Power Dissipation® Tc=25'C

20

W

Tj

Junction Temperature

150

'C

Tstg

Storage Temperature Range

-55-150 'C

^1^1 F\N LEASE

2.COLLECTOR

3. EMITTER

TO-220C package

•4 B H

1 zf1r MQ V •*

fi"1H

-• A

^

» 1.

^H

T~

K

T rr

H oh

— 1 f

cl

i

-* *S

»r*'J

« R|"«

mm

DIW M!N MAX

A 15,50 15.90

B 9.90 10.20

C 4.20 4.50

D 0.70 0.90

F 3.40 3.70

G 4.98 5.18

H 2.68 2.90

J 0.44 0,60

K 13.00 13.40

L 1.20 1.45

Q 2.70 2.90

R 2.30 2.70

S 1.29 1.35

u 6.45 6.65

u 8.66 8.86

N.I Seini-Conductors reserves the right to change test conditions, parameter limits and packaue dimensions without

notice, liitnrmntinn furnished by N.I Semi-Conductors is believed to be both accurate and reliable at ihe time of going

lo press. I louever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use "

N'J Semi -Conductors encourages customers to verity Unit datasheets are current before placina orders.

Qualify Semi-Conductors

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