A671 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

A671

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA671

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

-50

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA ; IC= 0

-7

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A

VBE(on) Base-Emitter On Voltage

IC= -1A ; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -25V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-1.0

V

-1.5

V

-100 μA

-100 μA

hFE-1

DC Current Gain

IC= -0.1A ; VCE= -4V

35

320

hFE-2

DC Current Gain

IC= -1A ; VCE= -4V

35

fT

Current-Gain—Bandwidth Product

IC= -0.5A;VCE= -4V; ftest= 1MHz

5

MHz

‹ hFE-1 Classifications

A

B

C

D

35-70 60-120 100-200 160-320

isc Website：www.iscsemi.cn

2

Share Link: