NE434S01-T1B 데이터 시트보기 (PDF) - NEC => Renesas Technology
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NE434S01-T1B Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS (TA = 25 qC)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
400
300
200
100
0
50
100
150
200
250
TA - Ambient Temperature - ˚C
NE434S01
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
100
80
–0.2 V
60
–0.4 V
40
20
–0.6 V
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
VDS = 2 V
80
60
40
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2 V
ID = 15 mA
20
MSG.
16
|S21S|2
12
MAG.
20
8
0
4
–2.0
–1.0
0
1
VGS - Gate to Source Voltage - V
Gain Calculations
~S21~
MSG. =
~S12~
1 + ~'~2 ð ~S11~2 ð ~S22~2
K=
2~S12~~S21~
2
4 6 8 10 14 20 30
f - Frequency - GHz
MAG. = ~S21~ (K r—K2ð1)
~S12~
' = S11˜S22 ð S21˜S12
3
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