2SA1020 데이터 시트보기 (PDF) - Unisonic Technologies

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2SA1020

SILICON PNP EPITAXIAL TRANSISTOR

Unisonic Technologies 

2SA1020

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

Ic

-2

A

TO-92NL

900

mW

Collector Power Dissipation

SOT-23

PC

300

mW

SOT-89

500

mW

Junction Temperature

Storage Temperature

TJ

150

°C

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector to Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Turn-on Time

Storage Time

Switching Time

Fall Time

SYMBOL

BVCEO

ICBO

IEBO

hFE1

hFE2

VCE(SAT)

VBE(SAT)

fT

COB

tON

tSTG

TEST CONDITIONS

Ic=-10mA, IB=0

VCB=-50V, IE=0

VEB=-5V, IC=0

VCE=-2V, IC=-0.5A

VCE=-2V, IC=-1.5A

Ic=-1A, IB=-0.05A

Ic=-1A, IB=-0.05A

VCE=-2V, Ic=-0.5A

VCB=-10V, IE=0, f=1MHz

tF

MIN TYP MAX UNIT

-50

V

-1.0 μA

-1.0 μA

70

240

40

-0.5 V

-1.2 V

100

MHz

40

pF

0.1

μs

1.0

μs

0.1

μs

„ CLASSIFICATION OF hFE1

RANK

RANGE

O

70 - 140

Y

120 - 240

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R211-007,D

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