RB425D(2008) 데이터 시트보기 (PDF) - ROHM Semiconductor
부품명
상세내역
제조사
RB425D Datasheet PDF : 4 Pages
| |||
Diodes
Shottky barrier diode
RB425D
RB425D
zApplication
Low current rectification
zFeatures
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
zStructure
Silicon epitaxial planar
zDimensions (Unit : mm)
r
ฦ࠼ߣ߽
㧗 Eachหleኸadᴺhas same dimension
ޓ㧙
㧗
㧙
zLead size figure (Unit : mm)
㪈㪅㪐
㪇㪅㪐㪌
r
㨪
r
r
㪩 㪦 㪟㪤㩷㪑㩷㪪 㪤㪛㪊
㪡㪜㪛㪜㪚㩷㪑㪪 㪇 㪫㪄 㪊 㪋 㪍
㪡㪜㪠 㪫㪘 㩷㪑㩷㪪 㪚㪄 㪌 㪐
㫎㪼 㪼 㫂㩷㪺 㫆 㪻㪼
zTaping dimensions (Unit : mm)
㪋㪅㪇㫧㪇㪅㪈
㪉㪅㪇㫧㪇㪅㪇㪌
㱢㪈㪅㪌㫧㪇㪅㪈
䇭䇭䇭䇭䇭㩷㩷㪇
㪇㪅㪏㪤㪠㪥㪅
㪪㪤㪛㪊
zStructure 㩷
㪇㪅㪊㫧㪇㪅㪈
㪊㪅㪉㫧㪇㪅㪈
㪋㪅㪇㫧㪇㪅㪈
zAbsolute maximum ratings (Ta=25qC)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward currenẗ́*1ͅ
Forward current surge peak 䋨60Hz䊶1cyc䋩䋨*1䋩
Junction temperature
Storage temperature
(*1)Rating of per diode
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ.
Forward voltage
VF1
-
-
VF2
-
-
Reverse current
IR1
-
-
Capacitance between terminals
Ct1
-
6
㱢㪈㪅㪇㪌㪤㪠㪥
㪈㪅㪊㪌㫧㪇㪅㪈
Limits
Unit
40
V
40
V
100
mA
1
A
125
㷄
-40 to +125
㷄
Max.
0.55
0.34
30
-
Unit
Conditions
V IF=100mA
V IF=10mA
μA VR=10V
pF VR=10V , f=1MHz
Rev.B
1/3
Share Link: 