2SA1063 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SA1063 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0
Vce(sat) Collector-Emitter Saturation Voltage lc= -6A; IB= -0.6A
VeE(on) Base-Emitter On Voltage
|c= -6A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB=-120V; !E=O
IEBO
Emitter Cutoff Current
hpE-1 DC Current Gain
VEB= -5V; lc= 0
lc= -2A ; VCE= -5V
hFE-2
DC Current Gain
lc= -6A ; VCE= -5V
fl
Current-Gain—Bandwidth Product
IC=-0.5A;VCE=-10V
• hpE-2 Classifications
R
Q
P
O
40-80 60-120 90-180 140-280
2SA1063
MIN TYP. MAX UNIT
-120
V
-2.0 V
-2.5 V
-1
mA
-2
mA
40
280
20
50
MHz
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