2SA1043 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SA1043

Silicon PNP Power Transistor

New Jersey Semiconductor 

, LJnc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973)376-8960

2SA1043

DESCRIPTION

• High Collector-Emitter Breakdown Voltage-

V(BR)CEo=-120V(Min)

• High Current Capability

• Wide Area of Safe Operation

• Complement to Type 2SC2433

APPLICATIONS

• Power switching applications

• power amplifier

• DC-DC converters

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-120

V

VGEO Collector-Emitter Voltage

-120

V

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-30

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25"C

Tj

Junction Temperature

-10

A

150

W

175

'C

Tstg

Storage Temperature Range

-65-175

"C

PIN 1.BASE

2. EMITTER

3. COLLECTOR (CASE)

TO-3 package

t-

I

V-

l_A

imn

DIM MIN MAX

A

3900

B 25.30 2667

C

7.50 g,50

D 0.90 1 10

E

MO 1 60

ij

1092

H

54t>

K U.-0 1350

Tirss"" L 1675'1 1705

N 19«*0

£l

400 4 20

u

3000 3020

4J2_ •150

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.

NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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