2SA1250 데이터 시트보기 (PDF) - New Jersey Semiconductor

부품명

상세내역

제조사

2SA1250

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=251C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc=-10mA; IB= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VBE(sat) Base-Emitter Saturation Voltage

lc= -5A; IB= -0.5A

ICEO

Collector Cutoff Current

VCE= -200V; IB= 0

ICBO

Collector Cutoff Current

VCB= -200V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hFE

DC Current Gain

lc= -5A; VCE= -1V

fr

Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V

2SA1250

MIN TYP. MAX UNIT

-200

V

-1.0

V

-1.5

V

-1.0 mA

-0.1 mA

-0.1 mA

10

40

MHz

Share Link: