2SA1201 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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2SA1201

Plastic-Encapsulate Transistors

Galaxy Semi-Conductor 

Production specification

Plastic-Encapsulate Transistors

2SA1201

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0

-120

V

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0

-120

V

Emitter-base breakdown voltage

V(BR)EBO IE=-1mA,IC=0

-5

V

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

ICBO

IEBO

hFE

VCE(sat)

VCB=-120V,IE=0

VEB=-5V,IC=0

VCE=-5V,IC=-100mA 80

IC=-500mA,IB=-50mA

-0.1 μA

-0.1 μA

240

-1 V

Base-emitter

VBE

VCE=-5V,IC=-500mA

-1

Transition frequency

fT

VCE=-5V, IE=-100mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

P

80-160

DO

Q

120-240

DY

E037

Rev.A

www.gmesemi.com

2

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