2SA1740-E-AB3-R 데이터 시트보기 (PDF) - Unisonic Technologies
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2SA1740-E-AB3-R Datasheet PDF : 5 Pages
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2SA1740
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Base to Emitter Voltage
-120
VCE=-10V
-100
-80
-60
TA=25℃
-40
TA=70℃
-20
TA= -30℃
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, VBE(V)
DC Current Gain vs.Collector Current
5
3
TA=70℃
VCE=-10V
2
100
TA=25℃
7
5
TA= -30℃
3
2
10
7
5
7-1.0 2 3 5 7 -10 2 3 5 7-100 2 3
Collector Current,Ic(mA)
Switch Time vs.Collector Current
10
7
5
tstg
3
2
1.0
tf
7
5
3
ton
2
0.1 VCC=-150V
7
5
-10IB1=10IB2=IC
3 5 7 10 2 3
5 7 100
23 5
Collector Current,Ic( mA)
Collector Current vs.Collector to Emitter Voltage
7
5 Icp
3
2
Ic
100
7
5
1ms
10ms
3
100ms
2
1.0
DC Operation
7
5
3
2
*Single pulse Ta=25℃
0.1
7
Mounted on ceramic board
(250mm2*0.8mm)
5
3
5 7 10
2 3 5 7 100 2 3 5
Collector to Emitter Voltage,VCE(V)
Collector Dissipation vs.Ambient Temperature
1.4
1.6
1.2
0.8
1.0
Collector to Emitter Saturation Voltage vs.Collector Current
5
3
Ic/IB=10
2
-1.0
7
5
0.6
0.4
0.2 Mounted on ceramic board
(250mm2*0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature ,Ta (℃)
3
2
-0.1
7
5
7-1.0
TA=70℃
TA=-30℃ TA=25℃
2 3 5 7 -10 2 3 5 7-100 2
Collector Current,Ic( mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R208-026,B
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