2SA1740 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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2SA1740 Datasheet PDF : 4 Pages
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PNP Epitaxial Planar Silicon Transistor
Production specification
2SA1740
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-10uA,IE=0
-400
V
Collector- emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-400
V
Emitter- base breakdown voltage
V(BR)EBO IE=-10uA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-300V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1 μA
DC current gain
hFE
VCE=-10V,IC=-50mA
60
200
Base-emitter saturation voltage
VBE(sat)
IC=-50mA,IB=-5mA
-1 V
Collector-emitter saturation voltage
VCE(sat)
IC=-50mA,IB=-5mA
-0.8 V
Transition frequency
fT
VCE=-30V, IC=-10mA
70
MHz
Output capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Cob
VCB=-30V,IE=0,f=1MHz
Cre
VCB=-30V,IE=0,f=1MHz
ton
VCC=-150V,IC=-50mA,
toff
IB1=IB2=-5mA
4
pF
3
pF
0.25
uS
5
uS
CLASSIFICATION OF hFE
Rank
Range
D
60-120
E
100-200
E042
Rev.A
www.gmesemi.com
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