2SB1197K 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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2SB1197K

Silicon PNP transistor in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB1197K

Rev.F Apr.-2017

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

-40

-32

-5.0

-800

200

150

-55～150

单位

Unit

V

V

V

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC =-50μA

VCEO IC =-1.0mA

最小值 典型值 最大值 单位

Min Typ Max Unit

-40

V

-32

V

Emitter-Base Breakdown Voltage VEBO IE=-50μA

-5.0

V

Collector Cut-Off Current

ICBO VCB=-20V IE=0

-0.5 μA

Emitter Base Cut-Off Current

IEBO VEB=-4.0V Ic=0

-0.5 μA

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

Collector Output Capacitance

hFE VCE=-3.0V IC=-100mA 120

VCE(sat) Ic=-500mA IB=-50mA

fT

VCE=-5.0V IE=50mA

f=100MHz

50

Cob

VCB=-10V IE=0

f=1.0MHz

200

12

390

-0.5 V

MHz

30 pF

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