2SB1223 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1223 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1223
DESCRIPTION
• High DC Current Gam-
: hi-t 2000(Min)@ (VCE= -2V,lc= -2A)
• Large Current Capability and Wide ASO.
• Complement to Type 2SD1825
APPLICATIONS
• Designed for use in control of motor drivers, printer
hammer drivers, and constant-voltage regulators.
iIr^V
'1~i*"2
-v,— '-iv-rtr
'" J
Fli1: 1 Base
2 Collector
3 Emitter
TO--220F p«ckkee
ABSOLUTE MAXIMUM RATINGS(Ta=25*C)
SYMBOL
PARAMETER
VALUE
VCBO Collector-Base Voltage
-70
Vceo .Collector-Emitter Voltage
-60
VETO Emitter-BaseVoltage
-6
Ic
Collector Current-Continuous
-4
Icvi
Collector Current-Peak
-6
Collector Power Dissipation
@Ta=25C.
2
c
Collector Power Dissipation
@TG=25l
20
Tj - JunctionTemperature
150
Tslg
Storage Temperature
-55-150
UNIT
V
V
V
A
A
'C
L
* » • ••
0-
1p° (''"4*"
> - c : I
F •:.j"M
{
LL- r
.'! »*i' !i
liiU
* •0.
1
•i
O f"\ .
U
1
fe1
A
i
K
{
j.
J •"»
mm
' ««-•••fT |~]
IjlJ
i ;i li
! ; li
! J|j
DIM MIN
A 14.05
E 10.00
r 4.40
D 0.75
F 3.10
h 3.70
j 0.50
K 13.4
L 1.10
N 5.00
y 2.70
R 2.20
s 2.65
I ~l 6.40
MAX
15.05
10.10
4.60
0.90
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
N.I Semi-Couduutors reserves the right u> change tosl conditions, parameter limits and package dimensior,^ without
tuiiieo. Inforinntion tiirnisriL-d by NJ Scini-C'iindueturs is believed to he both ueeurate and reliable ai the time ot'gnin
n> pies-;. I l(i\M-ver. NJ Semi-Conductors assumes no responsibility lor any emirs or omissions discovered in its use.
NJ Senii-C'oiidiiclors eneiiuriiyes eustnmers In verily that datasheets are current hel'urc plncing orders.
Qualir/ Semi-Conductors
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