2SB1260 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SB1260

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SB1260 TRANSISTOR (PNP)

FEATURES

z Power Transistor

z High Voltage and Current

z Low Collector-emitter saturation voltage

z Complements the 2SD1898

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-80

-80

-5

-1

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC=-50µA,IE=0

-80

V

V(BR)CEO IC=-1mA,IB=0

-80

V

V(BR)EBO IE=-50µA,IC=0

-5

V

ICBO

VCB=-60V,IE=0

-1

µA

IEBO

VEB=-4V,IC=0

-1

µA

hFE

VCE=-3V, IC=-0.1A

82

390

VCE(sat) IC=-500mA,IB=-50mA

-0.4

V

Cob

VCB=-10V,IE=0, f=1MHz

25

pF

VCE=-5V,IC=-50mA,

fT

f=30MHz

100

MHz

CLASSIFICATION OF hFE

RANK

P

RANGE

82–180

MARKING

Q

120–270

ZL

R

180–390

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