2SB1260 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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2SB1260

Silicon PNP transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB1260

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current-Continuous

Collector Current-Continuous(Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

*ICP

**PC

*PC

Tj

Tstg

数值

Rating

-80

-80

-5.0

-1.0

-2.0

0.5

2.0

150

-55～150

*Single pulse Pw=100ms：脉冲测试，脉宽 100ms。

**mounted on 40×40×0.7mm ceramic board：装于 40×40×0.7m 的陶瓷上。



电性能参数 / Electrical Characteristics(Ta=25℃)

单位

Unit

V

V

V

A

A

W

W

℃

℃

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-50μA IE=0

VCEO IC=-1.0mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=-50μA IC=0

Collector Cut-Off Current

ICBO VCB=-60V IE=0

Emitter Base Cut-Off Current

IEBO VEB=-4.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

Collector Output Capacitance

hFE VCE=-3.0V IC=-0.1A

VCE(sat)

fT

Cob

IC=-500mA

VCE=-5.0V

f=30MHz

VCE=-10V

f=1.0MHz

IB=-50mA

IC=-50 mA

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-80

V

-80

V

-5.0

V

-1.0 μA

-1.0 μA

82

390

-0.4 V

100

MHz

25

pF

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