2SB1260 데이터 시트보기 (PDF) - Transys Electronics Limited

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2SB1260

SOT-89 Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

SOT-89 Plastic-Encapsulated Transistors

2SB1260 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

0.5

Collector current

ICM:

-1

Collector-base voltage

V(BR)CBO:

-80

W (Tamb=25℃)

A

V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-89

1. BASE

2. COLLECTOR 1

3. EMITTER

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V(BR)CBO

Ic=-50µA , IE=0

-80

V

V(BR)CEO

IC= -1mA , IB=0

-80

V

V(BR)EBO

IE=-50µA, IC=0

-5

V

ICBO

VCB=-60 V , IE=0

-1

µA

IEBO

VEB=-4 V , IC=0

-1

µA

DC current gain

Collector-emitter saturation voltage

Transition frequency

hFE

VCE=-3V, IC= -0.1A

82

VCE(sat) IC=-500 mA, IB= -50mA

VCE= -5V, IC=- 50mA

fT

80

f = 30MHz

390

-0.4

V

MHz

CLASSIFICATION OF hFE

Rank

Range

P

82-180

Q

120-270

R

180-390

Marking

ZL

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