2SB1317 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
제조사
2SB1317 Datasheet PDF : 2 Pages
| |||
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
2SB1317
DESCRIPTION
• Good Linearity of hFE
• Wide Area of Safe Operation
• High DC Current-Gain Bandwidth Product
• Complement to Type 2SD1975 ''
APPLICATIONS
• High power amplification
• Optimum for the output stage of a Hi-Fi audio amplifier.
FIH 1 Base
2 Collector
3 Emitter
TO-3PL package
B
••
-H- C -•
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-15
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25'C
PC
Collector Power Dissipation
@ TC=25"C
Tj
Junction Temperature
-25
A
3.5
W
150
150
'C
Tstg
Storage Temperature Range
-55-150 "t
R
..I?
\ V »~*~- "*^2PL i^
f
^*
mm
DIM WIN
A 25.50
B 19.80
r
4.50
D
0.90
E 2.ao
F
2,40
6 10.30
H
3,10
,i
0.50
K 20,00
N
3,90
P
2,40
Q
3,10
R
1.90
ij
3.90
W | 2,90
MAX
26.50
20.20
5.50
1.1 0
3..20
2.60
111.00
3.30
0.70
21,00
4.50
2,60
3,50
j.SG
4,10
3.J5
N.I Semi-Coudiietors reserves the right to change test conditions, parameter limits and package dimensions \\ithout
notice. Information turnished hy N.I Semi-Conductorsis believed to he both accurate and reliable at the tim '
lo press. I louever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Soini-Conductois encourages customers lo verify that datasheets are current before placing orders.
Quality Semi-Conductors
Share Link: 