2SB1317 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1317 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SB1317
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcE(sat) Collector-Emitter Saturation Voltage IC=-10A; IB=-1A
VBEIOII) Base-Emitter On Voltage
lc= -8A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB=-180V; IE=0
-2.5
V
-1.8
V
-50 M A
IEBO
Emitter Cutoff Current
VEB= -3V;lc= 0
-50 u A
hFE-i
DC Current Gain
lc= -20mA ; VCE= -5V
20
hpE-2
DC Current Gain
lc=-1A;VCE=-5V
60
200
hFE-3
DC Current Gain
lc= -8A ; VCE= -5V
20
COB
Output Capacitance
lE=0;VcB=-10V;ftest= 1.0MHz
450
PF
fy
Current-Gain—Bandwidth Product
lc= -0.5A;VCE= -5V;f,est= 1 .0MHz
20
MHz
Classifications
Q
S
P
60-120 80-160 100-200
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