2SB1056 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1056 Datasheet PDF : 2 Pages
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JEIISU <^>£,mi-L.onauctoi iJ-^iociucta, One.
C7
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SB1056
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@lc= -5A
• Wide Area of Safe Operation
• Complement to Type 2SD1487
APPLICATIONS
• Designed for high power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25-Q
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-140
V
VCEO Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-7
A
I CM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25"C
PC
Collector Power Dissipation
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-12
A
3
W
80
150
°C
-55-150
•c
123
< 1 -
3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-SPFa package
__B___^ -*- C
i—
ti"*~T~r>K8v
r .- ;' -*\" U
A
"",.'
f
K*
f
-J
-R
Y
mm
DIM WIN , MAX
A 20.70 21.30
B 14.70 15.30
C
4.30 5.20
D
0.90 1.10
F
3.20 3.40
H
3.70 4.30
J
0.50 0.70
K 16.40 17.00
L
1.90 2.10
N 10.30 11.00
q
5.SO 6,00
R
1.80 2.20
s
3.10
3.SO
T
8.70
9.30
U
0.66 076
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy N.I Semi-Conductors is believed to he both accurate and reliable at the time ofyoina
to press. I Kmever, N.I Semi-Conduetors assumes no responsibility for an> errors or omissions discovered in iis use.
N.I Semi-Conductors encunraues customers to verily that datasheets are current before placing orders.
Quality Semi-Conductors
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