2SB1119 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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2SB1119

PNP Epitaxial Planar Silicon Transistors

Galaxy Semi-Conductor 

Production specification

PNP Epitaxial Planar Silicon Transistors

2SB1119

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-10μA IE=0

-25

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO IE=-10μA IC=0

-5

V

Collector cut-off current

ICBO

VCB=-20V IE=0

-0.1 μA

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

IEBO

hF

VCE(sat)

VEB=-4V,IC=0

VCE=-2V IC=-50mA

VCE=-2V IC=-1A

IC=-500mA IB=-50mA

-0.1 μA

100

560

40

-0.1 -0.3 V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA IB=-50mA

-0.85 -1.2 V

Transition frequency

fT

VCE=-10V,IC=-50mA,

180

MHz

Output Capacitance

Cobo

VCB=-10V f=1.0MHz IE=0

15

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

E043

Rev.A

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