CGD914MI 데이터 시트보기 (PDF) - NXP Semiconductors.
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CGD914MI Datasheet PDF : 14 Pages
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NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
CGD914; CGD914MI
−60
handbook, halfpage
CTB
(dB)
−70
MCD976
52
(1)
Vo
(dBmV)
48
−60
handbook, halfpage
Xmod
(dB)
−70
MCD977
52
(1)
Vo
(dBmV)
48
−80
44
(2)
−90
(3) 40
(4)
−100
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
−80
−90
−100
0
44
(2)
40
(3)
(4)
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
MCD978
52
(1)
Vo
(dBmV)
48
(2)
(3)
44
(4)
40
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.4 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
−50
handbook, halfpage
CSO
(dB)
(2)
−60
(3)
−70
(4)
MCD979
54
Vo
(dBmV)
(1)
50
46
−80
42
−90
38
−100
0
34
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.5 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
2001 Nov 01
5
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